Excitation intensity and InAs thickness dependent luminescence properties of ultrathin InAs layer in GaAs matrix
| dc.contributor.author | Kumar, Rahul | |
| dc.date.accessioned | 2023-04-03T10:08:16Z | |
| dc.date.available | 2023-04-03T10:08:16Z | |
| dc.date.issued | 2018 | |
| dc.description.abstract | A set of samples containing a single ultrathin InAs layer with varying thickness from 0.5 to 1.4ML in a GaAs matrix have been grown by molecular beam epitaxy on GaAs (001) substrates at low temperatures and investigated by low-temperature photoluminescence (PL). A linear change in emission energy with InAs thickness has been experimentally observed. The PL emission line shape from InAs/GaAs heterostructures has been investigated as a function of incident optical intensity. The interplay between uncorrelated electron-hole pairs, free excitons, and localized excitons, as a function of the excitation intensity, is found to play a significant role on the optical properties of the InAs layer and is described in detail | en_US |
| dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.5053412 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10148 | |
| dc.language.iso | en | en_US |
| dc.publisher | AIP | en_US |
| dc.subject | EEE | en_US |
| dc.subject | GaAs matrix | en_US |
| dc.subject | Emission mechanism | en_US |
| dc.title | Excitation intensity and InAs thickness dependent luminescence properties of ultrathin InAs layer in GaAs matrix | en_US |
| dc.type | Article | en_US |
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