Low temperature-high pressure grown thin gate dielectrics for MOS applications

Abstract

In this study we propose high pressure grown oxide (HIPOX) as an alternative low-temperature MOS gate insulator and show that it performs excellently in comparison to other widely reported low-temperature deposited oxides. Our optimized process conditions for HIPOX result in high quality gate dielectric comparable in quality to the standard thermal dry oxide in terms of initial properties as well as under various stress conditions. Sub 100 nm channel length vertical MOSFETs with HIPOX as a gate dielectric are fabricated and characterized to demonstrate the suitability of HIPOX as a low-temperature MOS gate dielectric.