Chemical Processes at Clean {1010} ZnO Surfaces Part 1.—Thermal Production of Surface Defects

dc.contributor.authorGreen, Mino
dc.contributor.authorLauks, Iments R.
dc.date.accessioned2025-11-19T09:28:38Z
dc.date.available2025-11-19T09:28:38Z
dc.date.issued1978
dc.description.abstractOxygen loss from single crystal ZnO {1010} surfaces has been investigated using the method of thermally programmed desorption (t.p.d.). The t.p.d. parameters (peak area, shape, width at half height and temperature of the maximum) have been analysed in terms of O2 and Zn loss kinetics from the outermost surface atoms of the crystal only. A reaction mechanism is proposed in which both positive surface oxygen vacancies and neutral surface step sites are formed, and in which the reaction kinetics are dependent upon the fractional concentration of both kinds of surface defect (θ and θss). The maximum value of θ is 4 % and θss is ∼20 %.en_US
dc.identifier.urihttps://dspace.bits-pilani.ac.in/handle/123456789/20107
dc.language.isoenen_US
dc.publisherJournal of the Chemical Society : Faraday Transaction - I. The Chemical Society, London. 1978, 74 (09-12)en_US
dc.subjectChemistryen_US
dc.subjectChemical processen_US
dc.subjectThermal productionen_US
dc.subjectJournal of the Chemical Society : Faraday Transaction - Ien_US
dc.subjectSurface defectsen_US
dc.titleChemical Processes at Clean {1010} ZnO Surfaces Part 1.—Thermal Production of Surface Defectsen_US
dc.typeArticleen_US

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