Radiation Induced Interface State Generation in Nitrided and Reoxidized Nitrided Gate Oxides

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dc.contributor.authorRao, V. Ramgopal
dc.date.accessioned2023-11-08T05:35:14Z
dc.date.available2023-11-08T05:35:14Z
dc.date.issued1992-01
dc.description.abstractReoxidized nitrided oxide is compared with nitrided oxides and dry SiO2 for radiation‐induced interface‐state generation (ΔDitm) and midgap voltage shifts (ΔVmg). The suppression of ΔDitm observed with heavy nitridation or reoxidation is explained in terms of the trapped‐hole recombination model together with the shifting of the location of the trapped positive charge away from the Si interface. This model can also explain the effect of nitrogen annealing on nitrided oxides.  en_US
dc.identifier.urihttps://pubs.aip.org/aip/jap/article-abstract/71/2/1029/394576/Radiation-induced-interface-state-generation-in?redirectedFrom=fulltext
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12909
dc.language.isoenen_US
dc.publisherAIPen_US
dc.subjectEEEen_US
dc.subjectReoxidized nitrided SiO2en_US
dc.subjectNitrided oxidesen_US
dc.titleRadiation Induced Interface State Generation in Nitrided and Reoxidized Nitrided Gate Oxidesen_US
dc.typeArticleen_US

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