On the Transient behavior of various drain extended MOS devices under the ESD stress condition
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Date
2010
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Publisher
IEEE
Abstract
This paper presents ESD evaluation of various nanoscale drain extended MOS devices. Current and time evolution of current filaments formed under the ESD stress conditions are investigated. A complete picture of device's behavior at the onset of space charge modulation and the evolution of current filamentation is discussed based on Transient Interferometric mapping studies.
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Keywords
EEE, Drain Extended MOS, Electrostatic discharge (ESD), TIM, Base push-out, Current filamentation