Effect of Line Defects on the Band Structures, Local Density of States, and the Landau Levels for Armchair Graphene Nanoribbons in the Quantum Hall Effect Regime

Abstract

The effects of one and two line defects are investigated with respect to the band structures and local density of states (LDOS) in armchair graphene nanoribbons (AGNRs) under the quantum Hall effect (QHE) regime. The E–k diagrams for these systems with multiple line defects are compared with those of pristine systems. The Landau levels and the edge states are affected as the number of line defects increases, corroborated by the reduction in the transmission function. This is also reflected in the change observed in the local density of states (LDOS) and the Landau levels as the number of line defects increases. This work offers a strategy for controlling the magnetoresistance of AGNRs with intentionally invoked line defects for device applications.