Power-area evaluation of various double-gate RF mixer topologies
| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-10-30T10:00:50Z | |
| dc.date.available | 2023-10-30T10:00:50Z | |
| dc.date.issued | 2005-09 | |
| dc.description.abstract | We analyze the suitability of the double gate MOSFETs (DG MOSFETs) for RF-mixer applications from the point of optimizing the transconductance gain, power consumption, and area. Mixer topologies using the 0.13-μm conventional MOSFETs, simultaneously driven DG MOSFETs (SDDG) and the independently driven DG MOSFETs (IDDG) are compared using extensive device simulations. In the frequency range 1-40 GHz, our simulation results show that the mixer circuits realized using the SDDG technologies show an order of magnitude lower power-area product, for a given transconductance gain, compared to the conventional and the IDDG technologies. | en_US |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/1498992 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12729 | |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Device simulation | en_US |
| dc.subject | Double-gate MOSFET (DG MOSFET) | en_US |
| dc.subject | RF-Mixer | en_US |
| dc.subject | MOSFETs | en_US |
| dc.title | Power-area evaluation of various double-gate RF mixer topologies | en_US |
| dc.type | Article | en_US |
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