Temperature dependent band gap shrinkage in GaN: Role of electron–phonon interaction
| dc.contributor.author | Sarkar, Niladri | |
| dc.date.accessioned | 2024-02-20T10:10:54Z | |
| dc.date.available | 2024-02-20T10:10:54Z | |
| dc.date.issued | 2009-08 | |
| dc.description.abstract | We present an experimental investigation of temperature dependent band-gap shrinkage in GaN using photoluminescence spectroscopy. The near-band-edge transition energy shifts to lower energy with increasing temperature. The parameters that describe the temperature-dependent red-shift of the band-edge transition energy are evaluated using different models. It has been found that the semi-empirical relation based on phonon-dispersion related spectral function leads to an excellent fit to the experimental data. | en_US |
| dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0038109809002683 | |
| dc.identifier.uri | https://dspace.bits-pilani.ac.in/xmlui/handle/123456789/14374 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.subject | Physics | en_US |
| dc.subject | A. GaN | en_US |
| dc.subject | D. Band gap | en_US |
| dc.subject | E. Photoluminscence | en_US |
| dc.title | Temperature dependent band gap shrinkage in GaN: Role of electron–phonon interaction | en_US |
| dc.type | Article | en_US |
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