High temperature capacitors using AlN grown by MBE as the dielectric

Abstract

The authors present the use of epitaxial AlN as the dielectric in a chip level thin film capacitor for operation at high temperatures and high frequencies. They have performed capacitance measurements up to 600 K. The basic performance is modeled as a simple metal-insulator-semiconductor capacitor, which provides insight into the underlying mechanisms of accumulation, depletion, and inversion. Throughout the tested temperature range, the capacitance is highly stable with only a slight, linear, decrease with temperature. Additionally, at low frequencies, the capacitor exhibits very high capacitance with an expected decrease with increasing frequency