Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness

dc.contributor.author	Rao, V. Ramgopal
dc.date.accessioned	2023-10-27T11:10:50Z
dc.date.available	2023-10-27T11:10:50Z
dc.date.issued	2010-03
dc.description.abstract	A systematic study of the dependence of short-channel effects (SCEs) on the channel thickness (Tch) of double-gate MOSFETs revealed that there is a particular range of Tch in which SCEs are significantly degraded compared to those of conventional planar MOSFETs. This phenomenon was found to originate from the electric field penetrating the channel region from the drain due to the disappearance of a neutral region in the channel. This dependence of this phenomenon on device parameters such as the channel doping concentration (Nc), the equivalent oxide thickness (EOT) and the gate length (Lg) was examined. The degradation of SCEs due to an inappropriate Tch was found to become more significant as Nc and Lg are reduced.	en_US
dc.identifier.uri	https://www.sciencedirect.com/science/article/abs/pii/S0026271410000053
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12687
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.subject	EEE	en_US
dc.subject	MOSFETs	en_US
dc.subject	Short-channel effects (SCEs)	en_US
dc.title	Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness	en_US
dc.type	Article	en_US

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