Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETs

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dc.contributor.authorRao, V. Ramgopal
dc.date.accessioned2023-11-08T05:31:13Z
dc.date.available2023-11-08T05:31:13Z
dc.date.issued1997-12
dc.description.abstractIn this paper we present experimental and simulation results on planar-doped-barrier MOSFETs (PDBFETs) and show the advantages that arise from the channel delta doping. Early and higher magnitude of velocity overshoot, suppression of avalanche multiplication, reduced hot-carrier problems are some of the advantages offered by PDBFETs over the conventional homogeneously doped MOSFETs in the sub 100 nm regime. Our low-temperature characterizations show clear ballistic transport in the fabricated 85 nm channel MOSFETs.en_US
dc.identifier.urihttps://ieeexplore.ieee.org/document/650505
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12908
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectFabricationen_US
dc.subjectMOSFETsen_US
dc.subjectMolecular beam epitaxial growthen_US
dc.subjectDoping profilesen_US
dc.subjectHot carriersen_US
dc.subjectCMOS technologyen_US
dc.titleSimulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETsen_US
dc.typeArticleen_US

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