Department of Physics
Permanent URI for this collectionhttp://localhost:4000/handle/123456789/1932
Browse
11 results
Search Results
Item Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes(AIP, 2018-05) Gangopadhyay, SubhashisPrecise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.Item Formation of Monolayer Graphene by Annealing Sacrificial Nickel Thin Films(ACS, 2009-09) Gangopadhyay, SubhashisGraphene films have been formed by annealing Ni thin films at 800 °C under vacuum conditions. The Ni thin films are deposited on Si/SiO2 and, following annealing, have a polycrystalline morphology with grain sizes on the order of 1 μm. Following growth, the Ni is removed by etching, and the graphene is transferred as a single continuous layer onto a separate surface. The fraction of monolayer graphene is investigated using optical and electron microscopy and Raman spectroscopy and is shown to be >75%.Item Oxidation mechanism of thin Cu films: A gateway towards the formation of single oxide phase(AIP, 2018) Gangopadhyay, Subhashis; Pande, SurojitControlled thermal oxidations of thin copper films at relatively lower temperatures (up to 500°C) leading towards the formation of a single phase of copper oxide are investigated where the oxidation temperature, duration, oxygen partial pressure, film thickness and the crystallographic orientations play very crucial roles to significantly control the final phase of the copper oxide. Thin Cu films of thicknesses 100-1000 nm were deposited on glass and silicon substrates using the vacuum assisted thermal evaporation technique. Oxidations of those Cu films were performed at different temperatures for variable durations in air ambient as well as oxygen ambient conditions. Four probe resistivity measurement, x-ray diffraction (XRD), Raman spectroscopy, ultraviolet–visible (UV-Vis) spectroscopy, scanning electron microscopy (SEM) and x-ray photoemission spectroscopy (XPS) techniques have been used to characterize the oxide films. At a thermodynamic equilibrium, it has been observed that the oxide phase is solely determined by the oxidation temperature, however, the oxygen partial pressure can significantly alter this temperature range. In case of thermal oxidation in air, the initial oxidation of the copper films starts at about 150 °C, but a well ordered crystalline phase of the cuprous oxide (Cu2O) is observed only above 200 °C. However, the cupric oxide (CuO) phase starts to appear only above 320 °C. The details of the oxidation mechanism of the Cu film are explained with a probable schematic model in terms of thermal diffusion as well as the chemical reactivity.Item Grain-boundary-controlled current transport in copper phthalocyanine(AIP, 2006-04) Sarkar, NiladriAnomalous temperature dependence of resistivity at low temperature is observed in copper-phthallocyanine thin film. A model based on grain-boundary-controlled transport has been developed for the explanation of the observed anomaly. The prediction is based on the assumption that the thin film beyond a certain thickness is mainly polycrystalline, consisting of grains. The transport is expected to be limited by potential barriers at grain boundaries.Item Scanning tunneling spectroscopy of thin films of carbon nanotubes(AIP, 2013) Gupta, Raj Kumar; Manjuladevi, V.The thin films of single walled carbon nanotubes (CNT) were deposited on indium tin oxide (ITO) glass substrates. The films were characterized using scanning tunneling microscopy and spectroscopy. The topographic images reveal a high degree of orientational order in the arrangement of bundles of CNT onto the ITO substrates. We found a significant narrowing of the band gap of the CNT films on ITO as compared to that of ITO film on glass substrate.Item Formation of H-type liquid crystal dimer at air-water interface(AIP, 2014) Manjuladevi, V.; Gupta, Raj KumarWe have formed the Langmuir monolayer of H-shaped Azo linked liquid crystal dimer molecule at the air-water interface. Isocycles of the molecule showed hysteresis suggesting the ir-reversible nature of the monolayer formed. The thin film deposited on the silicon wafer was characterized using Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The images showed uniform domains of the dimer molecule. We propose that these molecules tend to take book shelf configuration in the liquid phase.Item Sensing of contaminants in potable water using TiO{sub 2} functional film(AIP, 2016) Manjuladevi, V.The piezoelectric based quartz crystal microbalance is employed for sensing contaminants in potable water. A spin coated thin layer of TiO{sub 2} nanoparticles was formed at the sensing area of a 5 MHz AT-cut quartz wafer. The thin film of TiO{sub 2} nanoparticles forms a mesoporous functional layer for the trapping of water borne contaminants. The morphology of the thin film of TiO{sub 2} nanoparticles was studied using field emission scanning electron microscope (FESEM). The surface morphology of the TiO{sub 2} nanoparticles reveals the mesoporous structures indicating large number of defects and porous sites. Such film was employed for the detection of water borne contaminants by detecting the piezoelectric response from a quartz crystal microbalance. We found the film to be very sensitive to the contaminants. The minimum detection limit was found to be 330 ppb. The effect of surface recharging was also studied by altering the physical conditions so that the film can be used for repetitive usage.Item Sensing of contaminants in potable water using TiO2 functional film(AIP, 2016-04) Manjuladevi, V.; Gupta, Rajiv; Gupta, Raj KumarThe piezoelectric based quartz crystal microbalance is employed for sensing contaminants in potable water. A spin coated thin layer of TiO2 nanoparticles was formed at the sensing area of a 5 MHz AT-cut quartz wafer. The thin film of TiO2 nanoparticles forms a mesoporous functional layer for the trapping of water borne contaminants. The morphology of the thin film of TiO2 nanoparticles was studied using field emission scanning electron microscope (FESEM). The surface morphology of the TiO2 nanoparticles reveals the mesoporous structures indicating large number of defects and porous sites. Such film was employed for the detection of water borne contaminants by detecting the piezoelectric response from a quartz crystal microbalance. We found the film to be very sensitive to the contaminants. The minimum detection limit was found to be 330 ppb. The effect of surface recharging was also studied by altering the physical conditions so that the film can be used for repetitive usage.Item Synthesis, phase to phase deposition and characterization of rutile nanocrystalline titanium dioxide (TiO2) thin films(Elsevier, 2013-01) Gupta, Raj Kumar; Manjuladevi, V.In this work the preparation, deposition and structural properties of titanium oxide (TiO2) thin films were investigated. The films were deposited by means of the e-beam physical vapor deposition (EBPVD) method in high vacuum (10−7 Torr). A controlled deposition rate in the range of 0.1–0.3 Å/s was monitored in situ employing quartz crystal. The films were deposited on the oxidized Si (1 0 0) wafer, glass micro slides. These films were analyzed using Grazing Angle X-ray diffraction (GA-XRD), Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy (RAMAN), Atomic Force Microscopy (AFM) and UV–visible Spectroscopy (UV–vis). Structural characterization results showed mainly presence of the crystalline rutile phase, however an interfacial SiO2 layer between TiO2 and the substrate and the minor anatase crystalline phase of TiO2 was also identified in FTIR analysis. Grain size was found to be in the range of 100–125 nm while grain boundary was estimated to be 20 nm. Direct and indirect optical band gap was estimated to be 3.64 and 3.04 eV, respectively. A process induced self annealing of deposited film shows a strong effect on the structural, morphological and optical properties. Furthermore, low deposition rate and high vacuum allows rutile to rutile phase transformation from indigenously prepared TiO2 target to thin film.Item Electrical transport in superionic thin films prepared by pulsed laser deposition(AIP, 2011) Dalvi, AnshumanSuperionic thin films are obtained using PLD technique from ion oxysalt glassy target. The structural and electrical properties of the films have been investigated. Partially amorphous nature of the films has been confirmed by X‐ray diffraction measurements. The electrical conductivity of the sample has been measured at well controlled heating rate of Conductivity temperature cycles suggest that deposited films are essentially ionic in nature.