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Author: search.filters.author.Kandpal, KavindraSubject: search.filters.subject.Thin-film transistors (TFTs)

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    Investigations on high-κ dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies
    (Springer, 2016-02) Gupta, Navneet; Kandpal, Kavindra
    This paper presents the investigations on high-κ dielectrics for low operating voltage and low leakage zinc oxide thin film transistor (ZnO TFT) using three material selection methodologies namely Ashby, technique for order preference by similarity to ideal solution (TOPSIS) and VlseKriterijumska Optimizacija I Kompromisno Resenjein in Serbian (VIKOR). Various material properties such as dielectric constant, conduction band offset to ZnO, band-gap and temperature coefficient mismatch of high κ to ZnO are investigated to find out the most promising gate dielectric material. The analysis concludes that lanthanum oxide (La2O3) is the most promising gate dielectric material for ZnO TFT transistor. The result shows a good agreement between Ashby’s, TOPSIS and VIKOR approaches.
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    Adaptation of a compact SPICE level 3 model for oxide thin-film transistors
    (Springer, 2019-05) Gupta, Navneet; Kandpal, Kavindra
    Oxide thin-film transistors (TFTs) and metal–oxide–semiconductor field-effect transistors (MOSFETs) operate via different conduction mechanisms but exhibit similar device characteristics. In this work, a SPICE level 3 model originally defined for MOSFETs is successfully adapted to provide a behavioral model for oxide TFTs. This adapted compact model is applicable to all kinds of oxide TFTs, irrespective of the channel and dielectric material used. To capture the TFT behavior efficiently, the experimental characteristic of an oxide TFT is used to set various SPICE level 3 parameters.