Sub-threshold Swing Degradation due to Localized Charge Storage in SONOS Memories
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Date
2004-07
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Publisher
IEEE
Abstract
This paper discusses the effect of localized charge storage on sub-threshold swing and threshold voltage in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cells. By analyzing the change in potential contours, it has been shown that the change in sub-threshold swing is correlated to fringing of electric field lines, and hence to the gate-to-substrate capacitance.
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Keywords
EEE, Degradation, SONOS devices, Threshold voltage, Random access memory, Capacitance, Nonvolatile memory, Leakage current, Power dissipation