Sub-threshold Swing Degradation due to Localized Charge Storage in SONOS Memories

Simple item page
dc.contributor.authorRao, V. Ramgopal
dc.date.accessioned2023-11-06T06:50:12Z
dc.date.available2023-11-06T06:50:12Z
dc.date.issued2004-07
dc.description.abstractThis paper discusses the effect of localized charge storage on sub-threshold swing and threshold voltage in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cells. By analyzing the change in potential contours, it has been shown that the change in sub-threshold swing is correlated to fringing of electric field lines, and hence to the gate-to-substrate capacitance.en_US
dc.identifier.urihttps://ieeexplore.ieee.org/document/1345613
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12867
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectDegradationen_US
dc.subjectSONOS devicesen_US
dc.subjectThreshold voltageen_US
dc.subjectRandom access memoryen_US
dc.subjectCapacitanceen_US
dc.subjectNonvolatile memoryen_US
dc.subjectLeakage currenten_US
dc.subjectPower dissipationen_US
dc.titleSub-threshold Swing Degradation due to Localized Charge Storage in SONOS Memoriesen_US
dc.typeArticleen_US

Files

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Department of Electrical and Electronics Engineering