Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection
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Date
2009
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Journal ISSN
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Publisher
IEEE
Abstract
A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed.
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Keywords
Robustness, Electrostatic discharges, Electric breakdown, Switches, Stress, Breakdown voltage