Optimization of sub 100 nm Γ-gate Si-MOSFETs for RF applications

Abstract

This paper presents characterization and simulation studies on the RF performance of the Γ (Gamma) gate MOSFETs. The Γ-gate MOSFET offers the advantage of reduced gate resistance, a critical parameter in high frequency circuits. The aim of this study is to identify the optimum Γ-gate extension length from the gate and drain resistance point of view in aggressively scaled CMOS.