Channel engineering for high speed sub-1.0 V power supply deep sub-micron CMOS
No Thumbnail Available
Date
1999
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
The effects of channel engineering on device performance have been extensively investigated. The lateral asymmetric channel (LAC) MOSFETs show significantly higher I/sub dsat/ and g/sub msat/, lower I/sub off/, and superior short-channel performance compared with double-halo (DH) and conventional MOSFETs by effectively utilizing the velocity overshoot effects. It is demonstrated that the device switching speed of the LAC device at V/sub DD/=0.6 V is equivalent to that of a conventional device operated at V/sub DD/=1.5 V.
Description
Keywords
EEE, Power engineering and energy, Power supplies, Los Angeles Council, MOSFETs, DH-HEMTs, MOS devices