Channel engineering for high speed sub-1.0 V power supply deep sub-micron CMOS
| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-11-07T10:30:32Z | |
| dc.date.available | 2023-11-07T10:30:32Z | |
| dc.date.issued | 1999 | |
| dc.description.abstract | The effects of channel engineering on device performance have been extensively investigated. The lateral asymmetric channel (LAC) MOSFETs show significantly higher I/sub dsat/ and g/sub msat/, lower I/sub off/, and superior short-channel performance compared with double-halo (DH) and conventional MOSFETs by effectively utilizing the velocity overshoot effects. It is demonstrated that the device switching speed of the LAC device at V/sub DD/=0.6 V is equivalent to that of a conventional device operated at V/sub DD/=1.5 V. | en_US |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/799344 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12901 | |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Power engineering and energy | en_US |
| dc.subject | Power supplies | en_US |
| dc.subject | Los Angeles Council | en_US |
| dc.subject | MOSFETs | en_US |
| dc.subject | DH-HEMTs | en_US |
| dc.subject | MOS devices | en_US |
| dc.title | Channel engineering for high speed sub-1.0 V power supply deep sub-micron CMOS | en_US |
| dc.type | Article | en_US |
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