The temperature dependence of the band gap shrinkage due to the electron–phonon interaction in AlxGa1−xAs

Abstract

The photoluminescence spectrum of band edge transitions in AlxGa1−xAs is studied as a function of temperature and electron concentration. The parameters that describe the temperature dependence redshift of the band edge transition energy are evaluated using different models. We find that a semi-empirical relation based on a phonon dispersion related spectral function leads to an excellent fit to the experimental data.