The temperature dependence of the band gap shrinkage due to the electron–phonon interaction in AlxGa1−xAs

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dc.contributor.authorSarkar, Niladri
dc.date.accessioned2024-02-20T10:15:28Z
dc.date.available2024-02-20T10:15:28Z
dc.date.issued2006-01
dc.description.abstractThe photoluminescence spectrum of band edge transitions in AlxGa1−xAs is studied as a function of temperature and electron concentration. The parameters that describe the temperature dependence redshift of the band edge transition energy are evaluated using different models. We find that a semi-empirical relation based on a phonon dispersion related spectral function leads to an excellent fit to the experimental data.en_US
dc.identifier.urihttps://iopscience.iop.org/article/10.1088/0953-8984/18/5/021/meta
dc.identifier.urihttps://dspace.bits-pilani.ac.in/xmlui/handle/123456789/14376
dc.language.isoenen_US
dc.publisherIOPen_US
dc.subjectPhysicsen_US
dc.subjectElectron–phononen_US
dc.subjectAlxGa1−xAsen_US
dc.subjectPhotoluminescenceen_US
dc.titleThe temperature dependence of the band gap shrinkage due to the electron–phonon interaction in AlxGa1−xAsen_US
dc.typeArticleen_US

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