A Novel Drain-Extended FinFET Device for High-Voltage High-Speed Applications
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Date
2012-10
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Publisher
IEEE
Abstract
A novel drain-extended FinFET device is proposed in this letter for high-voltage and high-speed applications. A 2 × better R ON versus V BD tradeoff is shown from technology computer-aided design simulations for the proposed device, when compared with a conventional device option. Moreover, a device design and optimization guideline has been provided for the proposed device.
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Keywords
EEE, Drain extended MOSFET (DeMOS), FinFET, High voltage (HV), System-on-a-chip (SoC)