Exploration of Velocity Overshoot in a High-Performance Deep Sub-0.1- m SOI MOSFET with Asymmetric Channel Profile

Abstract

The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated using a novel thinfilm silicon-on-insulator (SOI) test structure with channel lengths down to 0.08 m. The uniformity of the carrier density and tangential field is realized by employing a lateral asymmetric channel (LAC) profile. The electron drift velocity observed in this work is 9.5 106 cm/s for a device with Le = 0:08 m at 300 K. The upward trend in electron velocity can be clearly noticed for decreasing channel lengths