Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique
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Date
2009-06
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IEEE
Abstract
The interface trap density of fresh TiN/TaN gated HfO 2 /SiO 2 /Si/epi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work.
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Keywords
EEE, Ge pMOSFET, Interface trap, Oxide trap