Grain-boundary-controlled current transport in copper phthalocyanine

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dc.contributor.authorSarkar, Niladri
dc.date.accessioned2024-02-20T10:28:54Z
dc.date.available2024-02-20T10:28:54Z
dc.date.issued2006-04
dc.description.abstractAnomalous temperature dependence of resistivity at low temperature is observed in copper-phthallocyanine thin film. A model based on grain-boundary-controlled transport has been developed for the explanation of the observed anomaly. The prediction is based on the assumption that the thin film beyond a certain thickness is mainly polycrystalline, consisting of grains. The transport is expected to be limited by potential barriers at grain boundaries.en_US
dc.identifier.urihttps://pubs.aip.org/aip/apl/article/88/16/162110/152605
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14377
dc.language.isoenen_US
dc.publisherAIPen_US
dc.subjectPhysicsen_US
dc.subjectTransport propertiesen_US
dc.subjectElectrical properties and parametersen_US
dc.subjectLight emitting diodesen_US
dc.subjectCrystallographic defectsen_US
dc.subjectThin filmsen_US
dc.subjectPotential energy barrieren_US
dc.titleGrain-boundary-controlled current transport in copper phthalocyanineen_US
dc.typeArticleen_US

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