Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs
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Date
2001-10
Authors
Rao, V. Ramgopal
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
This paper presents results on the characterization of Lateral Asymmetric Channel (LAC) thin film silicon-on-insulator (SOI) MOSFETs. These devices are compared with conventional SOI MOSFETs having uniform channel doping. The measurements have been taken for a number of channel lengths, silicon film thicknesses, and tilt angles of implantation. The aspects studied include threshold voltage roll-off, kink effect, gate induced drain leakage (GIDL) and parasitic bipolar transistor action. Measurements have been supplemented by device simulations. The LAC devices show excellent characteristics, with many advantages over the conventional devices.
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Keywords
EEE, Los Angeles Council, Semiconductor films, Threshold voltage, Length measurement, Thickness measurement