Optimization of Single Halo p-MOSFET Implant Parameters for Improved Analog Performance and Reliability

Abstract

Single halo (SH) MOSFETs are recently proposed for mixed signal applications in view of their superior analog performance such as gain, transconductance, output resistance etc [1]. In this work, we investigate the hot carrier degradation behaviour of SH and conventional p-MOSFETs using specific stress conditions appropriate for analog applications. The degradation of analog device parameters due to Cannel Hot carrier (CHC) stress and its implications on circuit operation are discussed.