Capacitance Degradation due to Fringing Field in Deep Sub-Micron MOSFETs with High-K Gate Dielectrics

Abstract

High-K gate dielectrics have been under extensive investigation for use in sub-lOOnm MOSFETs to suppress gate leakage. However, thicker gate dielectrics can result in degradation of the electrical performance due to increased fringing fields from the gate to source/drain. In this paper, the capacitance degradation resulting from this effect is analyzed and a simple technique to model this effect is presented.