Department of Electrical and Electronics Engineering
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Item Determination of Willingness to Pay for Entrance fee to National Park: An Empirical Investigation(CESER Publications, 2014) Bal, Debi PrasadThis paper examine the determinants of willingness to pay (WTP) of Bhitarakanika National Park (BNP), Odisha in India. Primary data has been collected from the visitors through survey method. We used multiple regression model to determine the WTP for entrance fee at BNP. The estimated results concluded that, income, age, day spent, marital status and travel cost have positively significant relationship with WTP whereas, gender is negatively affecting to WTP. From the policy perspective, we are suggesting to raise the entrance fee from Rs.20 to Rs. 40 which can raise the park revenue of BNP.Item Electromagnetic Field and Waves(New Age International, 2019) Gupta, NavneetElectromagnetic field and Waves is designed as a textbook for undergraduate students of electrical and Electronics Engineering for a course on electromagnetic field theory. The book introduces the basic concepts of Electrostatic and magnetostatic fields, before moving on to Maxwell's equation, electromagnetic wave propagation, transmission lines, waveguides and cavity resonators, and antennas and radiating systems. Key features wide coverage of information required for undergraduate students in electromagnetics. Highlights key terms and boxes essential formulae and definitions. Provides numerous solved examples in each br>Chapter with step-by-step solutions includes plenty of review questions and numerical problems.Item Concept of Engineering Physics(Dhanpat Rai, 2018) Gupta, NavneetItem Foundations of Electrical Engineering(OUP, 2013) Gupta, NavneetFoundations of Electrical Engineering is designed to serve as a textbook for first year engineering students. It provides a solid understanding of the fundamental principles on which modern electrical engineering is based. Suitable for: Foundations of Electrical Engineering is designed to serve as a textbook for first year engineering students.Item Principles Of Materials Science And Engineering(Dhanpat Rai & Company, 2014) Gupta, NavneetItem A Textbook of Engineering Physics(Dhanpat Rai, 2006-12) Gupta, NavneetItem Carbon Nanotube Field-Effect Transistors (CNFETs): Structure, Fabrication, Modeling, and Performance(Springer, 2021-05) Gupta, NavneetThe problems associated with attempting to scale down traditional metal oxide field-effect transistors (MOSFET) have led researchers to look into CNT-based field-effect transistors (CNFETs), as an alternative. Though the scaling of MOSFET has been the driving force toward the technological advancement, but due to continuous scaling, various secondary effects which include short channel effects, high leakage current, excessive process variation, and reliability issues degrade the device performance. On the other hand, CNFETs are not subjected to the scaling problems. The operation principle of the CNFET is similar to traditional MOSFET but the conduction phenomena are different. The traditional MOSFETs are based on the drift and diffusion phenomena in which channel length is very large as compared to mean free path of charge carriers whereas the CNFETs are based on ballistic transport conduction mechanism, in which channel length is very small as compared to mean free path of charge carriers. In CNFET, electrons are injected from source to drain and transported through the nanotubes without scattering. Due to ballistic transport the nanotubes act as a perfect conductor for electrons such that the full quantum information of these electrons (momentum, energy, spin) can be transferred without losses. The channel current in CNFETs depends on gate voltage, number of nanotubes in channel, dielectric material and its thickness, and diameter and chirality of carbon nanotubes. So in this chapter we shall discuss different device structures of CNFET, steps involved in the fabrication of CNFETs, advantages and limitations of various methods involved in the synthesis of CNTs, conduction models, and performance parameters.Item Modeling and Analysis of Metamaterial-Based Antenna for Wi-Fi and WLAN Applications(Springer, 2019-02) Gupta, NavneetIn this work, a 4 × 4 Rectangular Split Resonator (SRR) array with resonance at 5.8 GHz is proposed. By optimizing the geometry through genetic algorithm, sub-wavelength resonance at the desired frequency was obtained, while maintaining the antenna’s radiation efficiency at broadside. The total size of the antenna is 30 mm × 30 mm, thus ensuring compactness. The design was compared with a Circular SRR and an alternating sequence of Rectangular and Circular SRRs. Further, the permittivity and permeability of the structure was plotted, which was negative at the resonance frequency.Item Performance Analysis of (13,0) and (17,0) Carbon Nanotube Field Effect Transistors (CNFETs)(Springer, 2020) Gupta, NavneetThis paper explains the comparative analysis of the performance of (13,0) and (17,0) carbon nanotube field-effect transistors (CNFETs). The comparison is done by studying the output and transfer characteristics of CNFETs. Modeling of the total capacitance of cylindrical CNFETs for the two types of chirality (13,0) and (17,0) has also been reported in the paper. It has been observed that (13,0) carbon nanotube has lesser propagation delay, however, but the drain current is higher for (17,0) for the given parameters. This shows that the switching application is better in case of (13,0) for the given parameters.Item Material Selection Techniques in Materials for Electronics(Springer, 2020-02) Gupta, Navneet; Kandpal, KavindraMaterial selection is an important step prior to the actual fabrication of any electronic device. Owing to the availability of large set of materials, it is important to select the best possible material in order to enhance the performance of a device. Material selection approaches provide an easy way to recognize the trade-offs between conflicting materials properties and also to select the optimal material for better device performance. In addition to this, these approaches also help us to provide ranking to the alternatives from best to worst. Therefore, these approaches provide a platform to select and prioritize the possible materials and also provide support to perform rigorous evaluation of the possible alternatives. This chapter describes material selection methodologies in detail and explains the steps to be taken for each methodology to find out the most promising material for a given device.Item Electronic Behavior of Nanocrystalline Silicon Thin Film Transistor(Springer, 2017-10) Gupta, NavneetThin film transistor (TFT) plays an important role for the fabrication of highly functional active matrix backplanes for large area display applications such as organic light emitting diodes (OLEDs). Nanocrystalline silicon (nc-Si) has recently achieved lot of interest over existing hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) due to its superior properties which makes it suitable channel material for the fabrication of TFTs. In present work, the physical insight into the nc-Si TFT device characteristics and device non idealities is reported which can provide important step for the production of high performance large area display devices.Item MEMS Switches for RF Applications - A Review(Sensors & Transducers, 2013) Gupta, NavneetSensors and Biosensors, MEMS Technologies and its Applications (Book Series: Advances in Sensors: Reviews, Vol. 2) - 18 chapters with sensor related state-of-the-art reviews and descriptions of the latest achievements written by experts from academia and industry from 12 countries: China, India, Iran, Malaysia, Poland, Singapore, Spain, Taiwan, Thailand, UK, Ukraine and USA. This volume is divided into three main parts: physical sensors, biosensors, nanoparticles, MEMS technologies and applications. With this unique combination of information in each volume, the Advances in Sensors: Reviews Book Series will be of value for scientists and engineers in industry and at universities, to sensors developers, distributors, and users. Like the 1st volume of this Book Series, the 2nd volume also has been organized by topics of high interest.Item A Flexible Pressure Sensor Based on Multiwalled Carbon Nanotubes/ Polydimethylosiloxane Composite for Wearable Electronic-Skin Application(IEEE, 2022) Gupta, NavneetThe multiwalled carbon nanotubes/ polydimethylosiloxane (MWCNT/PDMS) composite based pressure sensor has been widely adopted in wearable health care devices and electronic-skins due to its high flexibility, piezoresistivity, high sensitivity over a broad linear range and biocompatibility. Herein, MWCNT/PDMS composites with different MWCNT contents were fabricated and their mechanical and electrical characteristics were evaluated in detail for each case. The MWCNT/PDMS composite pressure sensors shows high sensitivity (0.02715–0.08283 kPa -1 ) over large pressure sensing range from 0.1 to 100 kPa. In addition, through the cyclic stretching test, the strain-sensing properties of the MWCNT composite shows high reliability over 1000 repetitive cycles. The flexible devices can be used as the wearable electronic skin and successfully mounted on human skin to achieve the capability of physiological stimuli monitoring, i.e., human wrist pulse wave for health care applications. The wide linear working range with high sensitivity of the MWCNT/PDMS pressure sensor makes it a potential choice in flexible electronics such as wearable devices for health care monitoring, soft robotics and E-skin application.Item Substrate Selection Framework for Organic Thin-Film Transistor Based on Flexibility and Reliability Issues(IEEE, 2022-04) Gupta, NavneetFlexibility is an important feature of organic thin-film transistor (OTFT) technology. The need for flexibility adds challenges to the mechanical reliability of the OTFTs. This work focuses on mechanical and thermal failure mechanisms in an OTFT and their relation with the substrate properties. It is observed that four material parameters of the substrate, namely, Young’s modulus, thermal conductivity, coefficient of thermal expansion, and glass transition temperature, are crucial in determining the reliability and flexibility of the OTFT. Further more, using an interval-based technique for order preference by similarity to ideal solution (TOPSIS) technique, five polymer substrates including polycarbonate (PC), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyimide (PI), and polyethersulfone (PES) are analyzed. It is concluded that PI is the most suitable substrate material for OTFTs to improve flexibility and reliability.Item Ab Initio Study of Carbon Nanotube Field Effect Transistor Gas Sensor for Detection of Ammonia and Nitrogen Dioxide Gas(IEEE, 2022-07) Gupta, Navneet; Chaturvedi, NitinLebel-free sensors are capable for sensing low concentration of gas molecules. In this article, the importance of Carbon Nanotube Field Effect Transistor (CNFET) is described for gas sensing application. The first principal study to investigate the CNFET to detection of low concentration of ammonia (NH 3 ) and nitrogen dioxide (NO 2 ) gas molecules. By discussing the electronic and transport properties of CNFET, we find that CNFET can be used for gas sensing applications. Detailed analysis of binding energy, e-k diagram, density of state (DOS), device density of state (DDOS), transmission pathways and current-voltage (I-V) characteristics configuration have been performed using density functional theory (DFT) and non-equilibrium green function (NEGF) method. It has been observed that CNFET can be used for the potential application of gas sensor at room temperature. Out theoretical findings are corroborated with experimental data and this virtual device structure can be converted into physical device to get nano dimensions integrated gas sensoItem Fabrication of Carbon Nanotube Field-Effect Transistor Using Shadow Mask Technique(IJNeaM, 2022-04) Gupta, NavneetIn this work, a new approach based on shadow mask has been reported for fabricating low-cost carbon nanotube field-effect transistor (CNFET) with interdigitated source and drain electrodes. The drop cast method is used for depositing CNTs, which was characterized using Field Emission Scanning Electron Microscope (FESEM) and RAMAN spectroscopy. The RAMAN spectroscopy confirms the deposition of CNT and SEM images demonstrated the deposition of CNT network on dielectric layer without using O2 plasma etching. Further, Keithley 4200 SCS parameter analyzer was used to perform the electrical characterization of the fabricated device. The results indicated that the fabricated CNFET follow the trend of p-type multichannel CNFET.Item A CPW-Fed Circular SRR-Inspired Flexible Antenna Using Polydimethylsiloxane (PDMS) Substrate for WLAN and WBAN Applications(IEEE, 2022-01) Gupta, NavneetThis article presents a 50×40 mm 2 coplanar waveguide (CPW)-fed triple-band flexible antenna operating at 5, 5.8, and 6.6 GHz for wireless local area network (WLAN) and wireless body area network (WBAN) applications. In the proposed design, polydimethylsiloxane (PDMS) is used as a substrate with a dielectric constant εr of 2.65 and a loss tangent tan δεr of 0.02. In addition to the rectangular slot on the ground, the presented antenna has a single circular split-ring resonator (SRR) structure on the same side of the patch. This provides the required frequency notched characteristics for the targeted frequency bands, compactness, minimize losses, and backward radiation when used in close proximity to the human body. The proposed flexible antenna provides stable results in terms of performance parameters and specific absorption rate (SAR). We have also investigated the antenna under different operating conditions of moisture and bending. There exists a strong correlation between the simulation and measured findings.Item Analysis of Dielectric Properties of Polydimethylsiloxane (PDMS) as a Flexible Substrate for Sensors and Antenna Applications(IEEE, 2021-06) Gupta, NavneetIn this paper, a complete analysis of the complex dielectric constant of a flexible substrate from the silicon-based polymer- Polydimethylsiloxane (PDMS) is performed, and the obtained results are discussed. Two experimental methods are applied in this research. The first Two-resonator method is based on resonance measurements by excitation of two types of TE- and TM-mode cylinder resonators with PDMS disks, ensure an accurate determination of the dielectric constant and dielectric loss tangent in both parallel and perpendicular directions (e.g., ε par and ε perp ). The second method is based on the tight coverage of planar microstrip ring resonators with non- metalized PDMS samples gives reliable information for the equivalent dielectric parameters (e.g., ε eq , tan δ εeq ). The obtained results show that PDMS substrates have relatively weak but measurable uniaxial anisotropy and well-expressed frequency dependencies of the extracted dielectric parameters in the range 1-40 GHz, namely ε par ~ 2.82-2.7; ε perp ~ 2.73-2.52 and ε eq ~ 2.75-2.64, tan δ εeq ~ 0.017-0.048. The results are confirmed by several other complementary methods. The considered pair of methods are also applied in the temperature interval-40/ + 70 ° C; the measured temperature dependencies on the dielectric parameters turn out to be relatively strong. The possible origin of the measured PDMS uniaxial anisotropy has been discussed; in fact, it appears mainly in the temperature range-30/ + 40 ° C.Item first_page settings Order Article Reprints Open AccessArticle Numerical and Experimental Investigation of the Opposite Influence of Dielectric Anisotropy and Substrate Bending on Planar Radiators and Sensors(MDPI, 2021) Gupta, NavneetThe simultaneous influences of the substrate anisotropy and substrate bending are numerically and experimentally investigated in this paper for planar resonators on flexible textile and polymer substrates. The pure bending effect has been examined by the help of well-selected flexible isotropic substrates. The origin of the anisotropy (direction-depended dielectric constant) of the woven textile fabrics has been numerically and then experimentally verified by two authorship methods described in the paper. The effect of the anisotropy has been numerically divided from the effect of bending and for the first time it was shown that both effects have almost comparable but opposite influences on the resonance characteristics of planar resonators. After the selection of several anisotropic textile fabrics, polymers, and flexible reinforced substrates with measured anisotropy, the opposite influence of both effects, anisotropy and bending, has been experimentally demonstrated for rectangular resonators. The separated impacts of the considered effects are numerically investigated for more sophisticated resonance structures—with different types of slots, with defected grounds and in fractal resonators for the first three fractal iterations. The bending effect is stronger for the slotted structures, while the effect of anisotropy predominates in the fractal structures. Finally, useful conclusions are formulated and the needs for future research are discussed considering effects in metamaterial wearable patches and antennas.Item Numerical and Experimental Investigation of the Opposite Influence of Dielectric Anisotropy and Substrate Bending on Planar Radiators and Sensors(MDPI, 2020-12) Gupta, NavneetThe simultaneous influences of the substrate anisotropy and substrate bending are numerically and experimentally investigated in this paper for planar resonators on flexible textile and polymer substrates. The pure bending effect has been examined by the help of well-selected flexible isotropic substrates. The origin of the anisotropy (direction-depended dielectric constant) of the woven textile fabrics has been numerically and then experimentally verified by two authorship methods described in the paper. The effect of the anisotropy has been numerically divided from the effect of bending and for the first time it was shown that both effects have almost comparable but opposite influences on the resonance characteristics of planar resonators. After the selection of several anisotropic textile fabrics, polymers, and flexible reinforced substrates with measured anisotropy, the opposite influence of both effects, anisotropy and bending, has been experimentally demonstrated for rectangular resonators. The separated impacts of the considered effects are numerically investigated for more sophisticated resonance structures—with different types of slots, with defected grounds and in fractal resonators for the first three fractal iterations. The bending effect is stronger for the slotted structures, while the effect of anisotropy predominates in the fractal structures. Finally, useful conclusions are formulated and the needs for future research are discussed considering effects in metamaterial wearable patches and antennas.