Department of Electrical and Electronics Engineering

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1996 - 19972

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End date: 1999Subject: search.filters.subject.Annealing

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    Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics
    (IEEE, 1996-09) Rao, V. Ramgopal
    In this study we report for the first time results on neutral electron trap generation in reoxidised nitrided oxide dielectrics under various radiation doses and bias conditions and compare the results with the conventional oxides. We see very little electron trap creation in RNO dielectrics for radiation doses up to 5 Mrad (Si) and for bias fields up to /spl plusmn/2.5 MV/cm. We explain our results in RNO and oxide dielectrics using a three step defect creation model.
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    High-field stressing of LPCVD gate oxides
    (IEEE, 1997-03) Rao, V. Ramgopal
    We have investigated gate oxide degradation as a function of high-field constant current stress for two types of oxides, viz. standard dry and LPCVD oxides. Charge injection was done from both electrodes, the gate and the substrate. Our results indicate that compared to dry oxides, LPCVD oxides show reduced charge trapping and interface state generation for inversion stress. The degradation in LPCVD oxides with constant current stress has been explained by the hydrogen model.