Department of Electrical and Electronics Engineering

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Subject: search.filters.subject.Gallium nitride (GaN)

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    Wide Bandgap Devices: Enabling Technologies for Power Electronics-Based System
    (Springer, 2025-01) Maurya, Satyendra Kumar; Singh, Dheerendra
    Contemporary society heavily depends on power electronic systems, playing a pivotal role in realizing sustainability objectives by mitigating adverse environmental effects like the release of greenhouse gases and the exacerbation of global warming. Wide Bandgap (WBG) power components have the potential to bring about a paradigm shift in energy efficiency as compared to conventional silicon (Si)-based components. Amid various WBG materials, namely Gallium Nitride (GaN) and Silicon Carbide (SiC), GaN and SiC have surfaced as the most promising due to their exceptional performance capabilities. By utilizing WBG-based components, it becomes possible to achieve swifter switching accompanied by reduced energy losses at higher frequencies, thus facilitating the advancement of compact and remarkably efficient power converters. This present evaluative paper delves into the advantages and obstacles linked with SiC and GaN power devices, along with their applications in the realm of power electronics.
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    High-Electron-Mobility Transistor-Inspired Freestanding AlGaN/GaN/AlN Optical Waveguide for High-Pressure Sensing Applications
    (Wiley, 2023-01) Singhal, Rahul
    Herein, a high-pressure sensor based on freestanding high-electron-mobility transistor (HEMT)-inspired optical waveguide comprising AlGaN/GaN/AlN layers on silicon carbide (SiC) substrate is proposed and studied for harsh environment applications using finite element method (FEM). The working principle of the sensor is based on the change in birefringence due to applied pressure. Further, the transmission spectra for different wavelengths are evaluated. For the best possible outcomes, the dip wavelengths under different values of pressure are tracked and studied for different gallium nitride (GaN) core thicknesses. After optimizing GaN core thickness and AlGaN ratio, the sensor displays a good linear response within the pressure range of 90–150 MPa. The two dip wavelength shifts demonstrate maximum spectral sensitivities of −209.6 and 180 pm MPa−1, respectively, for the pressure range of 90–150 MPa within the communication wavelength regime of 1500–1600 nm. By considering the features such as cost-effectiveness, portability, simple design, and easy detection process, the proposed pressure sensor is optimum for harsh environment measurements and studies.
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    Temperature dependent etching of Gallium Nitride layers grown by PA -MBE
    (IEEE, 2015) Kumar, Rahul
    Future of microwave, power and photonics industry is focused on GaN due to its extraordinary material properties such as wide and direct band gap, large thermal and chemical stability, high breakdown voltage, high saturation velocity. Formation of devices for these applications requires a material selective etching which is performed via wet-etching process. In this paper, temperature dependent etching properties of GaN have been revealed. Molten KOH has been employed as an etchant, to etch 2 µm MBE grown GaN layer on Silicon (111). To verify temperature dependence of GaN etching, etching has been performed at a fixed concentration and etching time. Optimum temperature to etch GaN completely has been determined from Arrhenius plot of etch rate vs temperature. Etch depth has been determined from AFM, whereas, morphology has been confirmed using SEM
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    High-Electron-Mobility Transistor-Inspired Freestanding AlGaN/GaN/AlN Optical Waveguide for High-Pressure Sensing Application
    (Wiley, 2023-01) Singhal, Rahul
    Herein, a high-pressure sensor based on freestanding high-electron-mobility transistor (HEMT)-inspired optical waveguide comprising AlGaN/GaN/AlN layers on silicon carbide (SiC) substrate is proposed and studied for harsh environment applications using finite element method (FEM). The working principle of the sensor is based on the change in birefringence due to applied pressure. Further, the transmission spectra for different wavelengths are evaluated. For the best possible outcomes, the dip wavelengths under different values of pressure are tracked and studied for different gallium nitride (GaN) core thicknesses. After optimizing GaN core thickness and AlGaN ratio, the sensor displays a good linear response within the pressure range of 90–150 MPa. The two dip wavelength shifts demonstrate maximum spectral sensitivities of −209.6 and 180 pm MPa−1, respectively, for the pressure range of 90–150 MPa within the communication wavelength regime of 1500–1600 nm. By considering the features such as cost-effectiveness, portability, simple design, and easy detection process, the proposed pressure sensor is optimum for harsh environment measurements and studies.