Department of Electrical and Electronics Engineering

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Subject: search.filters.subject.SPICE Level-3

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    Adaptation of a compact SPICE level 3 model for oxide thin-film transistors
    (Springer, 2019-05) Gupta, Navneet; Kandpal, Kavindra
    Oxide thin-film transistors (TFTs) and metal–oxide–semiconductor field-effect transistors (MOSFETs) operate via different conduction mechanisms but exhibit similar device characteristics. In this work, a SPICE level 3 model originally defined for MOSFETs is successfully adapted to provide a behavioral model for oxide TFTs. This adapted compact model is applicable to all kinds of oxide TFTs, irrespective of the channel and dielectric material used. To capture the TFT behavior efficiently, the experimental characteristic of an oxide TFT is used to set various SPICE level 3 parameters.
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    Study of ZnO/BST interface for thin-film transistor (TFT) applications
    (Elsevier, 2021-04) Gupta, Navneet; Kandpal, Kavindra; Shekhar, Chandra
    This work presents an investigation of ZnO/BST interface for the potential use of (Ba,Sr)TiO3 as a gate–dielectric in ZnO based thin-film transistors (TFTs) for low-voltage operation. A metal-insulator-semiconductor capacitor (MIS-C) structure, which consists of a Pt/BST/ZnO stack, was fabricated on a corning glass substrate. The capacitance-voltage (C-V) characteristic of MIS-C gives the capacitance peak in both forward and backward sweep. This peak behavior of BST is due to its paraelectric nature attributed by changing the direction of a polar molecule over the applied electric field. C-V curve of ZnO/BST MIS-C structure exhibits a counter-clockwise hysteresis of -1.33 V due to the existence of donor-like oxygen vacancies present in BST and ZnO interface. The subthreshold slope of the device was found to be 203 mV/ decade and calculated using the measurement of interface state density (Dit). ZnO/BST interface also exhibits a very low value of leakage current density (3.148 × 10−7 Acm−2). Thus, the use of BST as a gate-dielectric in ZnO TFT has excellent potential, owing to its steep subthreshold slope, which implies fast switching and low off-state current.