Department of Electrical and Electronics Engineering
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Item Application of Mono Layered Graphene Field Effect Transistors for Gamma Radiation Detection(IEEE, 2018-10) Rao, V. RamgopalIn this work, we report the application of graphene field effect transistors (GFETs) as a gamma radiation sensor. The GFETs were irradiated at room temperature by 60 Co gamma radiation source for 10 kGy and 20 kGy gamma dose. The Electrical measurements and Raman spectroscopy showed that gamma radiation induced p-doping in graphene. Large positive shifts in Dirac point and significant degradation in electron mobility were observed post-gamma irradiation. Thus modulation in transport properties of GFETs was utilized here to measure the absorbed gamma radiations. We propose, a GFET based radiation detector with high sensitivity of + 113 V for 20 kGy gamma dose operating in ambient condition.Item A Passive Gamma Radiation Dosimeter Using Graphene Field Effect Transistor(IEEE, 2020-03) Rao, V. RamgopalIn this work, Graphene-based field-effect transistors (GFETs) are demonstrated as a highly sensitive dosimeter for gamma radiation. Graphene-based field-effect transistors exhibit p-type doping with the Dirac point shifting in the positive direction upon exposure to gamma radiation. Concurrently, an asymmetric degradation in the electron and hole mobility was observed with the former degrading more rapidly. It is shown that change in the Dirac voltage and carrier mobility is strongly dependent on the dose of gamma radiation. A sensitivity of ~1 V/kGy is reported. Gamma radiation causes partial aerial oxidation of graphene-channel which leads to p-doping as confirmed by the emergence of a higher binding energy peak (286.8 eV) in X-ray photoelectron spectra (XPS). The decrease in contact potential difference estimated through Kelvin probe force microscopy (KPFM) confirms this finding. The radiated devices showed a stable response for ~70 days. Our work demonstrates that gamma irradiation can also be used to induce large and stable hole concentrations in graphene. Such highly sensitive GFET can serve as real-time dosimeter operating in ambient conditions.