Department of Electrical and Electronics Engineering
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Item Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs(IEEE, 1998) Rao, V. RamgopalThe effect of plasma damage on the MOSFET's flicker noise properties is examined in this work. We observe an abnormal noise peak in the 1/f noise spectrum at around 2 kHz which is a characteristic of the plasma damage. The dependence of the noise peak on the plasma induced degradation was studied in virgin n- and p-channel MOSFETs and this peak is shown to correlate well with the amount of damage in the p-MOSFETs.Item Capacitance Degradation due to Fringing Field in Deep Sub-Micron MOSFETs with High-K Gate Dielectrics(IEEE, 1999-09) Rao, V. RamgopalHigh-K gate dielectrics have been under extensive investigation for use in sub-lOOnm MOSFETs to suppress gate leakage. However, thicker gate dielectrics can result in degradation of the electrical performance due to increased fringing fields from the gate to source/drain. In this paper, the capacitance degradation resulting from this effect is analyzed and a simple technique to model this effect is presented.Item 100 nm channel length MNSFETs using a jet vapor deposited ultra-thin silicon nitride gate dielectric(IEEE, 1999) Rao, V. RamgopalMetal-nitride-semiconductor (MNS) FETs with channel lengths down to 100 nm with a novel jet vapor deposited (JVD) SiN insulator as gate dielectric are fabricated and characterized for their electrical performance. By employing the charge pumping technique, the SiN interface quality and its effect on the transistor performance are evaluated. We show that, compared to conventional SiO/sub 2/ MOSFETs, the SiN devices show lower gate leakage current, competitive drain current drive and transconductance, good interface quality, and reduced hot-carrier degradation.Item High-field stressing of LPCVD gate oxides(IEEE, 1997-03) Rao, V. RamgopalWe have investigated gate oxide degradation as a function of high-field constant current stress for two types of oxides, viz. standard dry and LPCVD oxides. Charge injection was done from both electrodes, the gate and the substrate. Our results indicate that compared to dry oxides, LPCVD oxides show reduced charge trapping and interface state generation for inversion stress. The degradation in LPCVD oxides with constant current stress has been explained by the hydrogen model.